- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
00020
- Availability
-
20
- Author / Contributor
- Filter by Author / Creator
-
-
Crommie, Michael F. (2)
-
Pedramrazi, Zahra (2)
-
Chen, Yi (1)
-
Herbig, Charlotte (1)
-
Martín-Recio, Ana (1)
-
Mo, Sung-Kwan (1)
-
Mujid, Fauzia (1)
-
Park, Jiwoong (1)
-
Pulkin, Artem (1)
-
Ryu, Hyejin (1)
-
Shen, Zhi-Xun (1)
-
Tang, Shujie (1)
-
Ugeda, Miguel M. (1)
-
Wang, Feng (1)
-
Wong, Dillon (1)
-
Wu, Quansheng (1)
-
Xie, Saien (1)
-
Yazyev, Oleg V. (1)
-
Zhang, Canxun (1)
-
Zhang, Yi (1)
-
- Filter by Editor
-
-
null (1)
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Ugeda, Miguel M. ; Pulkin, Artem ; Tang, Shujie ; Ryu, Hyejin ; Wu, Quansheng ; Zhang, Yi ; Wong, Dillon ; Pedramrazi, Zahra ; Martín-Recio, Ana ; Chen, Yi ; et al ( , Nature Communications)
Abstract Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1
T ′-WSe2. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T ′-WSe2and a semiconducting domain of 1H -WSe2in contiguous single layers. The QSHI nature of single-layer 1T ′-WSe2is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.